? semiconductor components industries, llc, 2000 november, 2000 rev. 2 1 publication order number: mtb55n06z/d mtb55n06z preferred device power mosfet 55 amps, 60 volts nchannel d 2 pak this power mosfet is designed to withstand high energy in the avalanche mode and switch efficiently. this high energy device also offers a draintosource diode with fast recovery time. designed for high voltage, high speed switching applications in power supplies, pwm motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. ? avalanche energy capability specified at elevated temperature ? sourcetodrain diode recovery time comparable to a discrete fast recovery diode ? low stored gate charge for efficient switching ? internal sourcetodrain diode designed to replace external zener transient suppressorabsorbs high energy in the avalanche mode ? esd protected. designed to typically withstand 400 v machine model and 4000 v human body model. maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 60 vdc draintogate voltage (r gs = 1.0 m w ) v dgr 60 vdc gatetosource voltage continuous nonrepetitive (t p 10 ms) v gs v gsm 20 40 vdc vpk drain current continuous @ t c = 25 c continuous @ t c = 100 c single pulse (t p 10 m s) i d i d i dm 55 35.5 165 adc apk total power dissipation @ t c = 25 c derate above 25 c total power dissipation @ t a = 25 c (note no tag) p d 113 0.91 2.5 watts w/ c operating and storage temperature range t j , t stg 55 to 150 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 25 vdc, v ds = 60 vdc, v gs = 10 vdc, peak i l = 55 apk, l = 0.3 mh, r g = 25 w ) e as 454 mj thermal resistance junction to case junction to ambient junction to ambient (note no tag) r q jc r q jc r q ja 1.1 62.5 50 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using the minimum recommended pad size. marking diagram & pin assignment mtb55n06z yww 1 gate 4 drain 2 drain 3 source 55 amperes 60 volts r ds(on) = 18 m w device package shipping ordering information mtb55n06z d 2 pak 50 units/rail d 2 pak case 418b style 2 1 2 3 4 http://onsemi.com nchannel d s g mtb55n06z = device code y = year ww = work week mtb55n06zt4 d 2 pak 800/tape & reel preferred devices are recommended choices for future use and best overall value.
mtb55n06z http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (cpk 2.0) (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 60 53 vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 125 c) i dss 1.0 10 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics (note 2.) gate threshold voltage (cpk 2.0) (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 2.0 3.0 6.0 4.0 vdc mv/ c static draintosource onresistance (cpk 2.0) (v gs = 10 vdc, i d = 27.5 adc) r ds(on) 14 18 m w draintosource onvoltage (v gs = 10 vdc) (i d = 55 adc) (i d = 27.5 adc, t j = 125 c) v ds(on) 0.825 0.74 1.2 1.0 vdc forward transconductance (v ds = 4.0 vdc, i d = 27.5 adc) g fs 12 15 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 1390 1950 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 520 730 transfer capacitance f = 1 . 0 mhz) c rss 119 238 switching characteristics (note 3.) turnon delay time t d(on) 27 54 ns rise time (v dd = 30 vdc, i d = 55 adc, v gs( ) =10vdc t r 157 314 turnoff delay time v gs(on) = 10 vdc, r g = 9.1 w ) t d(off) 116 232 fall time r g 9.1 w ) t f 126 252 gate charge (s fi 8) q t 40 56 nc (see figure 8) (v ds = 48 vdc, i d = 55 adc, q 1 7.0 (v ds 48 vdc , i d 55 adc , v gs = 10 vdc) q 2 18 q 3 15 sourcedrain diode characteristics forward onvoltage (i s = 55 adc, v gs = 0 vdc) (i s = 55 adc, v gs = 0 vdc, t j = 125 c) v sd 0.93 0.82 1.1 vdc reverse recovery time t rr 57 ns (i s 55 adc v gs 0 vdc t a 32 (i s = 55 adc, v gs = 0 vdc, di s /dt = 100 a/ m s) t b 25 reverse recovery stored charge di s /dt = 100 a/ m s) q rr 0.11 m c internal package inductance internal drain inductance (measured from contact screw on tab to center of die) (measured from drain lead 0.25 from package to center of die) l d 3.5 4.5 nh internal source inductance (measured from the source lead 0.25 from package to source bond pad) l s 7.5 2. pulse test: pulse width 300 m s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperature.
mtb55n06z http://onsemi.com 3 figure 1. onregion characteristics figure 2. transfer characteristics figure 3. onresistance versus drain current and temperature figure 4. onresistance versus drain current and gate voltage figure 5. onresistance variation with temperature figure 6. draintosource leakage current versus voltage 3.0 4.5 0 v ds , drain-to-source voltage (volts) 60 40 20 50 10 v gs , gate-to-source voltage (volts) 4.4 6.4 2.0 40 20 10 0 60 10 i d , drain current (amps) 24 20 16 12 8.0 i d , drain current (amps) 20 10 15.0 14.6 14.2 13.8 13.4 13.0 30 -25 25 -50 t j , junction temperature ( c) 1.8 1.4 1.2 1.0 0.8 0.6 v ds , drain-to-source voltage (volts) 10 50 0 1000 100 10 1.0 0.1 0.01 0 i d , drain current (amps) i r 0 1.5 0.5 1.0 2.0 2.5 3.5 4.0 4.8 5.2 2.4 2.8 3.2 3.6 4.0 30 50 60 20 30 40 50 40 50 60 , drain-to-source resistance (normalized) r ds(on) 50 150 75 1.6 20 60 30 40 i dss , leakage (na) 5.0 30 5.6 6.0 , drain current (amps) d v ds 10 v , drain-to-source resistance (m ) ds(on) v gs = 10 v r , drain-to-source resistance (m ) ds(on) 100 125 v gs = 10 v i d = 15 a v gs = 0 v v gs = 4.0 v t j = 25 c 5.0 v 6.0 v 10 v 9.0 v 8.0 v 7.0 v t j = -55 c 100 c 25 c t j = 100 c -55 c 25 c v gs = 10 v t j = 25 c 15 v t j = 25 c 100 c 125 c
mtb55n06z http://onsemi.com 4 figure 7. capacitance variation figure 8. gatetosource and draintosource voltage versus total charge figure 9. resistive switching time variation versus gate resistance figure 10. diode forward voltage versus current figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy versus starting junction temperature 10 25 -10 gate-to-source or drain-to-source voltage (volts) 4000 3200 1600 2400 q g , total gate charge (nc) 24 40 0 8.0 4.0 2.0 0 100 1.0 r g , gate resistance (ohms) 1000 100 10 v sd , source-to-drain voltage (volts) 0.54 0.5 30 20 10 0 0.58 1.0 10 0.1 v ds , drain-to-source voltage (volts) 100 10 1.0 0.1 t j , starting junction temperature ( c) 50 25 500 400 300 100 0 125 c, capacitance (pf) v t, time (ns) i s , source current (amps) 800 0 -5.0 0 5.0 15 20 28 32 4.0 8.0 12 16 20 6.0 10 12 10 0.62 0.66 0.70 0.74 0.94 , drain current (amps) i d 100 75 100 150 200 e as , single pulse drain-to-source 36 , gate-to-source voltage (volts) gs t j = 25 c i d = 30 a v dd = 30 v v gs = 10 v 0.78 0.82 0.86 0.90 t j = 25 c v gs = 0 v avalanche energy (mj) i d = 30 a t j = 25 c c iss c oss c rss c iss c rss v ds = 0 v v gs = 0 v v gs v ds 32 16 8.0 0 24 40 48 v , drain-to-source voltage (volts) ds t j = 25 c i d = 30 a v ds v gs q t q 3 q 2 q 1 t d(on) v gs = 20 v single pulse t c = 25 c r ds(on) limit thermal limit package lmit 100 s 10 s 1.0 ms 10 ms dc t d(off) t r t f
mtb55n06z http://onsemi.com 5 figure 13. thermal response 0.001 0.01 0.00001 t, time (seconds) 1.0 0.1 r(t), effective transient thermal 0.01 0.0001 resistance (normalized) 1.0 10 0.1 d = 0.5 0.2 0.1 0.05 0.02 single pulse 0.01
mtb55n06z http://onsemi.com 6 package dimensions d 2 pak case 418b03 issue d style 2: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d t m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 b m b
mtb55n06z http://onsemi.com 7 notes
mtb55n06z http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mtb55n06z/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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